Fermi-level dependence of implanted Be diffusion in InP

Abstract

The diffusion of ion implanted Be was studied by comparing the implanted profiles with their annealed profiles. The Be diffusion had been investigated in semi-insulating InP and in n- and p-type InP. The medium and high doses Be implants after a few seconds of activation anneal displayed fully developed redistribution. The redistribution is dependent on the background doping level. There is no redistribution during any type of anneal in highly n-type substrates, but as the Fermi-level is shifted towards the valence band by changing the background doping, the Be redistributes by developing a "tail". The implantation damage induced transient enhanced interstitial Be diffusion is assumed to be responsible for the redistribution.