K. Ikeda, Y. Kamimuta, Y. Moriyama, M. Ono, M. Oda, T. Irisawa, T. Tezuka
{"title":"Strained germanium nanowire MOSFETs","authors":"K. Ikeda, Y. Kamimuta, Y. Moriyama, M. Ono, M. Oda, T. Irisawa, T. Tezuka","doi":"10.1109/ISTDM.2014.6874704","DOIUrl":null,"url":null,"abstract":"Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μ<sub>eff</sub> = 1922 cm[su2}/Vs) and record-low off-current (2.7×10<sup>-</sup>9A/μm at V<sub>d</sub> = -0.5 V) were achieved among scaled (sub-100nm L<sub>g</sub>) Ge MOSFET for the device with the L<sub>g</sub> of 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874704","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Ge nanowire MOSFETs with a uniaxial compressive strain as high as 3.9% were demonstrated by 2-step Ge-condensation technique. Record high hole mobility (μeff = 1922 cm[su2}/Vs) and record-low off-current (2.7×10-9A/μm at Vd = -0.5 V) were achieved among scaled (sub-100nm Lg) Ge MOSFET for the device with the Lg of 45nm. These results indicate that strained-Ge channels have a potential to serve as pFET channel of scaled future CMOS.
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