Performance Variability and Analog Behaviors of Memristive Devices with New Transition Metal Carbide

Abstract

Physical realization of electrical synapses with good reliability aroused great interest due to rapid development of neuromorphic computing. Meanwhile, a new family of two-dimensional transition metal carbides (TMC) has exhibited great potential in performance improvement of electronic devices. However, there are very few investigations for performing synaptic devices using transition metal carbides. Moreover, reliability is crucial for achieving good biological plasticity as well as a controllable synaptic system. In this work, synaptic devices with transition metal carbide were successfully fabricated and reliability has been studied in details. Resistance window of memristor has been able to achieve 7 orders, which provides a possible solution in building artificial neural networks with accurate and efficient learning capability.