S. Wirths, M. Pampillón, E. San Andrés, D. Stange, A. Tiedemann, G. Mussler, A. Fox, U. Breuer, J. Hartmann, S. Mantl, D. Buca
{"title":"Growth and interface engineering of highly strained low bandgap group IV semiconductors","authors":"S. Wirths, M. Pampillón, E. San Andrés, D. Stange, A. Tiedemann, G. Mussler, A. Fox, U. Breuer, J. Hartmann, S. Mantl, D. Buca","doi":"10.1109/ISTDM.2014.6874645","DOIUrl":null,"url":null,"abstract":"Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874645","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Highly tensile strained Ge(Sn) layers epitaxially grown on GeSn strain relaxed buffer layer have been presented. Electrical characterization exhibits good interfacial quality of the high-k gate stacks employing HfO2 on Ge and strained Ge. These results mark a first step towards electronic device integration of low bandgap highly tensely strained group IV semiconductors.
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