Ultimately thin SOI MOSFETs: special characteristics and mechanisms

Abstract

The fabrication of very thin Si films is an absolute priority for successfully scaling down the channel length of SOI MOSFETs below 50-100nm. While "ultra-thin" is a generic terminology for Si films 30-50 nm thick, the focus of this paper is on much thinner films, in the terminal range of 1-5 nm. N-channel MOSFETs, fabricated at NTT (Japan) on low-dose SIMOX substrates (62 nm thick buried oxide) have elevated, thicker source and drain, natural (residual) body doping, thick gate oxide (50 nm) and long channel (30 /spl mu/m to attenuate the parasitic influence of series resistances and device topology). The transistor body has been thinned by sacrificial oxidation.