D. Triyoso, T. Dao, T. Kropewnicki, F. Martínez, R. Noble, M. Hamilton
{"title":"Progress and challenges of tungsten-filled through-silicon via","authors":"D. Triyoso, T. Dao, T. Kropewnicki, F. Martínez, R. Noble, M. Hamilton","doi":"10.1109/ICICDT.2010.5510274","DOIUrl":null,"url":null,"abstract":"Through Silicon Via (TSV) has been used for back-end packaging and more recently, for front end active device integration. In this work we report recent progress and challenges for via cleaning, via filling and wafer bow / stress monitoring. Furthermore, the importance of preparation technique for accurate characterization of tungsten-filled TSV profile will be presented.","PeriodicalId":187361,"journal":{"name":"2010 IEEE International Conference on Integrated Circuit Design and Technology","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Integrated Circuit Design and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2010.5510274","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Through Silicon Via (TSV) has been used for back-end packaging and more recently, for front end active device integration. In this work we report recent progress and challenges for via cleaning, via filling and wafer bow / stress monitoring. Furthermore, the importance of preparation technique for accurate characterization of tungsten-filled TSV profile will be presented.
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