Enhanced Spontaneous Emission from GaAs Quantum Wells with Monolithic Optical Microcavities

H. Yokoyama, K. Nishi, T. Anan, H. Yamada
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引用次数: 1

Abstract

To date, several experiments have demonstrated the alteration of materials’ spontaneous emission rate in cavities1-3). Altering the spontaneous emission is also interesting from the device point of view. For example, Kobayashi et al. proposed the concept of a thresholdless laser with the full confinement of spontaneously emitted photons in closed microcavities4).
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单片光学微腔增强GaAs量子阱自发发射
迄今为止,几个实验已经证明了材料在腔内的自发发射速率的变化(1-3)。从器件的角度来看,改变自发辐射也很有趣。例如,Kobayashi等人提出了无阈值激光器的概念,将自发发射的光子完全限制在封闭的微腔中。
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