A compact model for the SET parameter variations of oxide RRAM array

Abstract

A physics-based compact model is developed to describe the parameter variations of oxide RRAM devices. The stochastic generation of oxygen vacancies and the variation of generation energy are considered in the model for the main reasons of the parameter fluctuation during SET process. The model is verified based on the measured data from 1kb 1T-1R RRAM array. Cycle-to-cycle variation and device-to-device variations of SET voltage and ON resistance are simulated by the model and compared with the experimental data. The model can be used for the simulation of large-scale memory arrays and logic or security circuits based on RRAM devices.