R. Bez, S. Bossi, B. Gleixner, F. Pellizzer, A. Pirovano, G. Servalli, M. Tosi
{"title":"Phase Change Memory development trends","authors":"R. Bez, S. Bossi, B. Gleixner, F. Pellizzer, A. Pirovano, G. Servalli, M. Tosi","doi":"10.1109/IMW.2010.5488398","DOIUrl":null,"url":null,"abstract":"At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base [1]. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade.","PeriodicalId":149628,"journal":{"name":"2010 IEEE International Memory Workshop","volume":"1958 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2010.5488398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
At the beginning of this decade, in early 2000, few disruptive technologies had been proposed to replace the industry standard Non-Volatile Memory (NVM) technology and to enlarge the Flash application base [1]. A widely accepted statement was that if any technology will succeed, it will materialize in the next decade.