Sub-100µW low power operation of Vibrating Body FETs

D. Grogg, A. Ionescu
{"title":"Sub-100µW low power operation of Vibrating Body FETs","authors":"D. Grogg, A. Ionescu","doi":"10.1109/VTSA.2009.5159324","DOIUrl":null,"url":null,"abstract":"This paper reports the low power operation of Vibrating Body Field Effect Transistors as active resonators for communication applications. For the first time we report active resonators operating at 2MHz and 20MHz with power consumption less than 100µW and Quality factors in the order of 3000. This performance opens new applications of devices for wireless sensor networks.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159324","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper reports the low power operation of Vibrating Body Field Effect Transistors as active resonators for communication applications. For the first time we report active resonators operating at 2MHz and 20MHz with power consumption less than 100µW and Quality factors in the order of 3000. This performance opens new applications of devices for wireless sensor networks.
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低于100µW的振动体fet低功耗工作
本文报道了振动体场效应晶体管作为通信用有源谐振器的低功耗工作。我们首次报道了工作在2MHz和20MHz的有源谐振器,功耗低于100 μ W,质量因子在3000数量级。这种性能打开了无线传感器网络设备的新应用。
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