GaAs/AlGaAs electrooptic modulator with novel electrodes and bandwidth in excess of 40 GHz

R. Spickermann, S. Sakamoto, M. Peters, N. Dagli
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引用次数: 2

Abstract

This abstract reports the latest results of our ongoing effort on GaAs/AlGaAs traveling wave Mach-Zehnder electrooptic modulators. Previously we reported >40 GHz electrical bandwidths but with rather large on/off voltage V/sub /spl pi//. By introducing a completely different electrode design we have reduced the V/sub /spl pi// from 28 V to 10 V while keeping the measured bandwidth >40 GHz. Furthermore the new design reduces the microwave loss, which determines the bandwidth, from 4.6 to 3.2 dB/cm at 35 GHz. Additionally, this new electrode geometry has the potential for further V/sub /spl pi// reduction while maintaining low loss.
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具有新型电极和带宽超过40 GHz的GaAs/AlGaAs电光调制器
本文报道了我们在GaAs/AlGaAs行波马赫-曾德电光调制器上的最新研究成果。以前我们报道过>40 GHz的电带宽,但具有相当大的开/关电压V/sub /spl / pi//。通过引入完全不同的电极设计,我们将V/sub /spl pi//从28 V降低到10 V,同时保持测量带宽>40 GHz。此外,新设计降低了决定带宽的微波损耗,在35 GHz时从4.6 dB/cm降至3.2 dB/cm。此外,这种新的电极几何形状具有进一步降低V/sub /spl / pi//的潜力,同时保持低损耗。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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