Challenges and Recent Developments in Device Isolation Technology

U. Schwalke
{"title":"Challenges and Recent Developments in Device Isolation Technology","authors":"U. Schwalke","doi":"10.1109/ESSDERC.2000.194716","DOIUrl":null,"url":null,"abstract":"This contribution briefly reviews the current status on device isolation technology. Starting with conventional shallow-trench-isolation (STI), the challenges introduced by this approach are outlined. Based on this discussion, the concept of the recently developed extended trench isolation gate technology (EXTIGATE) is presented. It will be shown that EXTIGATE not only provides a relief from the drawbacks of conventional STI processing, but also offers promising alternatives for front-end process integration, device optimization and specific applications.","PeriodicalId":354721,"journal":{"name":"30th European Solid-State Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th European Solid-State Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSDERC.2000.194716","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This contribution briefly reviews the current status on device isolation technology. Starting with conventional shallow-trench-isolation (STI), the challenges introduced by this approach are outlined. Based on this discussion, the concept of the recently developed extended trench isolation gate technology (EXTIGATE) is presented. It will be shown that EXTIGATE not only provides a relief from the drawbacks of conventional STI processing, but also offers promising alternatives for front-end process integration, device optimization and specific applications.
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设备隔离技术的挑战和最新发展
这篇文章简要回顾了设备隔离技术的现状。从传统的浅沟隔离(STI)开始,概述了这种方法带来的挑战。在此基础上,提出了最近发展起来的扩展沟槽隔离栅技术(EXTIGATE)的概念。EXTIGATE不仅消除了传统STI工艺的缺点,而且为前端工艺集成、设备优化和特定应用提供了有希望的替代方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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