Ying‐Chen Chen, Yao‐Feng Chang, B. Fowler, F. Zhou, Xiaohan Wu, C. Hsieh, H. Chang, Chih-Hung Pan, Min-Chen Chen, Kuan‐Chang Chang, T. Tsai, T. Chang, Jack C. Lee
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引用次数: 2
Abstract
Intrinsic unipolar SiOx-based Resistive-RAM (ReRAM) characteristics have been investigated. The cross-bar MIM structures have been examined under AC frequency response, by varying device area, temperature and current states. The results provide additional insights into the hopping/switching mechanisms. For the first time, by using SiOx/HfOx stacking engineering, we have developed a low-voltage operation (<; 2V) for SiOx-based ReRAM. The SiOx/HfOx stacking optimization not only maintains the RS behaviors even in air environment without any programming window degradation, but also further reduces the switching voltage below 2V.
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