Run-to-run process control of oxide CMP using integrated metrology

S.S.P. Rao, J. Stefani, S. Comstock, J. Larsen, B. Paquette, M. Wang
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引用次数: 5

Abstract

Process control of dielectric CMP has become more stringent as device dimensions decrease. This study reports on the improvement in process control that was obtained by using an integrated metrology tool, and automated, factory-level, process control algorithms. The control methodology was proven to be capable of handling multiple pattern levels, with different pattern densities, on multiple polishers in an advanced-prototype/development fab. The improvement in control and throughput with respect to offline metrology and manual control is presented.. Residual sources of variation are analyzed, and schema for further improvements in control capability are presented, based on tests conducted.
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用集成计量法控制氧化物CMP的运行过程
随着器件尺寸的减小,电介质CMP的工艺控制要求越来越严格。本研究报告了通过使用集成计量工具和自动化的工厂级过程控制算法获得的过程控制的改进。该控制方法已被证明能够在先进原型/开发晶圆厂的多个抛光机上处理具有不同图案密度的多个图案级别。介绍了离线计量和人工控制在控制和吞吐量方面的改进。分析了剩余的变异源,并在测试的基础上提出了进一步提高控制能力的方案。
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