Impact of technology scaling on RF CMOS

IEEE International SOC Conference, 2004. Proceedings. Pub Date : 2004-11-30 DOI:10.1109/SOCC.2004.1362363

Hassan Hassan, M. Anis, M. Elmasry

引用次数: 14

Abstract

Inspired by the huge improvement in the RF properties of CMOS, RF designers are invading the wireless market with all-CMOS RF transceivers and system-on-chip implementations. In this work, the impact of technology scaling on the RF properties of the CMOS; frequency properties, noise performance, linearity, stability, and non-quasi static effects, is investigated to provide RF designers with an insight to the capabilities of future CMOS technologies. Using the BSIM4 model it is found that future CMOS technologies have high prospects in the RF industry.

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技术缩放对射频CMOS的影响

受到CMOS射频特性巨大改进的启发，射频设计人员正以全CMOS射频收发器和片上系统实现入侵无线市场。在本工作中，研究了技术缩放对CMOS射频特性的影响;频率特性、噪声性能、线性度、稳定性和非准静态效应，为射频设计人员提供对未来CMOS技术能力的洞察。利用BSIM4模型，发现未来的CMOS技术在射频工业中具有很高的前景。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE International SOC Conference, 2004. Proceedings.

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