V. Mishkevich, A. Jordan, V. Swaminathan, J. Geary
{"title":"Finite element stress modeling of InGaAsP/InP lasers","authors":"V. Mishkevich, A. Jordan, V. Swaminathan, J. Geary","doi":"10.1109/DRC.1995.496307","DOIUrl":null,"url":null,"abstract":"InGaAsP/InP lasers operating at 1.3/spl mu/m and 1.55/spl mu/m wavelength are used currently in many long haul and local loop communication systems. In addition to demands on the performance characteristics of these lasers, their long-term reliability under the operating conditions should also be satisfactory. Strain is one of many factors that can affect laser reliability. The principal objective of the current work is to construct processing related thermal stresses in InP based laser structures.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496307","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
InGaAsP/InP lasers operating at 1.3/spl mu/m and 1.55/spl mu/m wavelength are used currently in many long haul and local loop communication systems. In addition to demands on the performance characteristics of these lasers, their long-term reliability under the operating conditions should also be satisfactory. Strain is one of many factors that can affect laser reliability. The principal objective of the current work is to construct processing related thermal stresses in InP based laser structures.