{"title":"Time evolution of V/sub TH/ distribution under BT stress in ultra-thin gate oxides","authors":"Y. Mitani, H. Satake","doi":"10.1109/ICICDT.2004.1309978","DOIUrl":null,"url":null,"abstract":"In this paper, time evolutions of threshold voltage (V/sub TH/) in p-MOSFETs have been investigated and discussed from the viewpoint of a statistical distribution. No change in the dispersion of the V/sub TH/ distribution under bias temperature (BT) stress was observed, whereas average values of V/sub TH/ monotonically increased. On the other hand, the V/sub TH/ distribution was remarkably deteriorated after soft breakdown progression of gate oxides.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, time evolutions of threshold voltage (V/sub TH/) in p-MOSFETs have been investigated and discussed from the viewpoint of a statistical distribution. No change in the dispersion of the V/sub TH/ distribution under bias temperature (BT) stress was observed, whereas average values of V/sub TH/ monotonically increased. On the other hand, the V/sub TH/ distribution was remarkably deteriorated after soft breakdown progression of gate oxides.
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