N. Belov, T. Chou, J. Heck, K. Kornelsen, D. Spicer, S. Akhlaghi, M. Wang, T. Zhu
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引用次数: 32
Abstract
The developed bonding process utilizes AuSn solder and provides liquid-proof sealing and multiple reliable electrical connections between the bonded wafers. The bond can withstand 300°C and features a thin bond line (2–3 µm), high bond strength, excellent bond gap control, and low stress due to small amount of bonding material. A Nb/Au seed layer was shown to be an optimal adhesion and barrier film.
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