{"title":"Atomic scale defects in the Si/SiON system and the negative bias temperature instability","authors":"P. Lenahan","doi":"10.1109/ICICDT.2004.1309970","DOIUrl":null,"url":null,"abstract":"This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO/sub 2/-SiON systems which are likely involved in the negative bias temperature instability.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reviews the present day understanding of several atomic scale defects and defect/hydrogen interactions found in Si/SiO/sub 2/-SiON systems which are likely involved in the negative bias temperature instability.
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