A. Keshavarz, Gregory S. Spawn, Nelson Delos Reyes, Rogelio Mincitar, Laurent F. Dion
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Abstract
This paper shows the sensitivity of the non-volatile memory reliability test to the test structure design and the pad sharing with other devices. Detailed results are presented to show how other devices on the same test structure can interfere with the EEPROM endurance test results and cause dramatic shifts in the data.
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