Novel 3D piezoresistive silicon force sensor for dimensional metrology of micro components

P. Ruther, J. Bartholomeyczik, S. Trautmann, M. Wandt, O. Paul, W. Dominicus, R. Roth, K. Seitz, W. Strauss
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引用次数: 39

Abstract

This paper reports the successful fabrication and characterization of a novel three-axial silicon force sensor based on piezoresistive transducers and its application in dimensional metrology. The innovative sensor design enables a distinct reduction of the critical ratio Sz /Sx of out-of-plane stiffness Sz to in-plane stiffness Sx. In contrast to existing single-chip sensors with Sz/Sx = 30 a ratio of 4 is achieved which improves the detection of inclined surfaces. The sensor consists of a flexible cross-structure realized by deep reactive ion etching. The arms of the cross-structure are connected to a silicon frame and to the central part of the cross-structure through silicon membranes hinges. A stylus with a probing sphere is used as the tactile element. Forces applied to the sphere are transferred into a deflection of the cross-structure. The respective stress values in the membranes are detected using implanted piezoresistors. The sensor element is applied in dimensional metrology of micro components with lateral dimensions larger than 100 mum. The lateral resolution of the sensor element is 10 nm
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用于微元件尺寸测量的新型三维压阻硅力传感器
本文报道了一种基于压阻式传感器的新型三轴硅力传感器的成功制作和表征及其在尺寸测量中的应用。创新的传感器设计能够显著降低面外刚度Sz与面内刚度Sx的临界比Sz /Sx。与现有的Sz/Sx = 30的单片传感器相比,实现了4的比率,提高了斜面的检测。该传感器由柔性交叉结构组成,通过深度反应离子刻蚀实现。所述交叉结构的臂部通过硅膜铰链连接到硅框架和连接到所述交叉结构的中心部分。带有探测球体的触控笔被用作触觉元件。施加在球体上的力被转换成交叉结构的挠度。使用植入的压阻器检测膜中各自的应力值。该传感器元件适用于横向尺寸大于100微米的微型部件的尺寸测量。传感器元件的横向分辨率为10纳米
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