Deep-level optical spectroscopy on iron acceptor doped in InP and In/sub x/Ga/sub 1-x/P

Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) Pub Date : 1999-05-16 DOI:10.1109/ICIPRM.1999.773686

T. Takanohashi

{"title":"Deep-level optical spectroscopy on iron acceptor doped in InP and In/sub x/Ga/sub 1-x/P","authors":"T. Takanohashi","doi":"10.1109/ICIPRM.1999.773686","DOIUrl":null,"url":null,"abstract":"Spectral dependence of the photoionization cross sections for iron (Fe) acceptor doped in the liquid-phase-epitaxy-grown InP and In/sub x/Ga/sub 1-x/P (x=0.49) layers is determined by photocapacitance spectroscopy. The deep-level structures and the carrier-emission processes are precisely analyzed. For the crystal-field-split levels of Fe/sup 2+/:/sup 5/E and /sup 5/T/sub 2/, the fundamental transitions of /sup 5/E-/spl Gamma//sub 1/, /spl Gamma//sub 15/-/sup 5/E in InP:Fe, and /spl Gamma//sub 15/-/sup 5/E, /spl Gamma//sub 15/-/sup 5/T/sub 2/ in In/sub x/Ga/sub 1-x/P:Fe are adequately described by the Lucovsky-model calculation. The optical thresholds and the crystal-field-split energies are determined accurately. The small difference between the optical and thermal energies indicates that the Fe acceptor level is perturbed weakly by the lattice vibration in the InP and In/sub x/Ga/sub 1-x/P. Nonexponential photocapacitance transient is observed in the In/sub x/Ga/sub 1-x/P:Fe for the alloying effects.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"162 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773686","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

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Abstract

Spectral dependence of the photoionization cross sections for iron (Fe) acceptor doped in the liquid-phase-epitaxy-grown InP and In/sub x/Ga/sub 1-x/P (x=0.49) layers is determined by photocapacitance spectroscopy. The deep-level structures and the carrier-emission processes are precisely analyzed. For the crystal-field-split levels of Fe/sup 2+/:/sup 5/E and /sup 5/T/sub 2/, the fundamental transitions of /sup 5/E-/spl Gamma//sub 1/, /spl Gamma//sub 15/-/sup 5/E in InP:Fe, and /spl Gamma//sub 15/-/sup 5/E, /spl Gamma//sub 15/-/sup 5/T/sub 2/ in In/sub x/Ga/sub 1-x/P:Fe are adequately described by the Lucovsky-model calculation. The optical thresholds and the crystal-field-split energies are determined accurately. The small difference between the optical and thermal energies indicates that the Fe acceptor level is perturbed weakly by the lattice vibration in the InP and In/sub x/Ga/sub 1-x/P. Nonexponential photocapacitance transient is observed in the In/sub x/Ga/sub 1-x/P:Fe for the alloying effects.

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掺杂InP和in /sub x/Ga/sub 1-x/P的铁受体的深能级光谱学研究

利用光电容光谱法测定了掺杂在液相外延生长的InP和in /sub x/Ga/sub 1-x/P (x=0.49)层中的铁(Fe)受体光解离截面的光谱依赖性。对其深层结构和载流子发射过程进行了精确分析。对于Fe/sup 2+/:/sup 5/E和/sup 5/T/sub 2/的晶体场分裂能级，在InP:Fe中/sup 5/E-/spl Gamma//sub 1/、/spl Gamma//sub 15/-/sup 5/E和in /sub x/Ga/sub 1-x/P:Fe中/spl Gamma//sub 15/-/ spl Gamma// sup 5/T/sub 2/的基本跃变用lucovsky模型计算得到了充分的描述。精确地确定了光学阈值和晶体场分裂能。在InP和in /sub x/Ga/sub - 1-x/P中晶格振动对Fe受体能级的扰动较弱。在in /sub x/Ga/sub 1-x/P:Fe合金中观察到非指数光电容瞬态。

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Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)

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