Analytical Modeling of the p-Type BESOI MOSFET at Linear Region Operation Leonard

Abstract

The BESOI MOSFET is a reconfigurable transistor, i.e., it can work as an n-type or a p-type device due to its back enhanced operating principle. The back gate is used to induce carriers at the back interface (silicon film/buried oxide) to the low doped channel. This work aims to propose a first order model for the drain current at linear region of the p-type BESOI MOSFET based on the back and front silicon film/SiO2 interfaces conduction. The analytical expression takes into account the series resistance, that plays an important role in the BESOI MOSFET due to the low doped channel and the drain and source Schottky contacts. The comparison between simulated and modeled data showed a very good agreement for a first order modeling.