A 0.5-V, 3-mW, 54/spl times/54-b multiplier with a triple-V/sub th/ CMOS/SIMOX circuit scheme

K. Fujii, T. Douseki
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引用次数: 2

Abstract

Summary form only given. Sub-1 V CMOS/SOI circuit technology is the most effective candidate for ultra-low-power applications in future ULSIs. We have proposed a triple-V/sub th/ CMOS/SIMOX circuit (Fujii et al., 1998; Douseki et al., 1998) that operates at an ultra low supply voltage of less than 0.5 V. The circuit consists of fully-depleted low- and medium-V/sub th/ CMOS logic gates and partially-depleted high-V/sub th/ power switch transistors. The low-V/sub th/ CMOS logic gates in critical paths and medium-V/sub th/ logic gates in noncritical paths achieve fast operation and leakage current reduction in the active mode. In addition, high-V/sub th/ power-switch transistors dramatically cut the leakage current in the standby mode. To improve circuit performance, the delay time of the critical path in the low-V/sub th/ logic blocks should be reduced and lowand medium-V/sub th/ logic gates should be assigned without any loss of speed. In this paper, we describe a triple-V/sub th/ 54/spl times/54-b multiplier that uses a 108-b adder with a source-controlled transmission-gate multiplexer in the critical path and a Wallace tree block in which low- and medium-V/sub th/ logic gates are automatically assigned using EDA tools.
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一个0.5 v, 3mw, 54/spl倍/54倍倍的倍频器,采用三v /sub / CMOS/SIMOX电路方案
只提供摘要形式。低于1 V的CMOS/SOI电路技术是未来ulsi中超低功耗应用的最有效候选者。我们提出了一个三v /sub / CMOS/SIMOX电路(Fujii et al., 1998;Douseki et al., 1998),在小于0.5 V的超低电源电压下工作。该电路由完全耗尽的低电压和中电压/次电压/ CMOS逻辑门和部分耗尽的高电压/次电压/功率开关晶体管组成。关键路径上的低v /sub / CMOS逻辑门和非关键路径上的中v /sub /逻辑门在有源模式下实现了快速运行和减少漏电流。此外,高电压/低电压/功率开关晶体管显著降低待机模式下的漏电流。为了提高电路性能,应减少低v /sub /逻辑块中关键路径的延迟时间,并在不损失速度的情况下分配低v /sub /逻辑门和中v /sub /逻辑门。在本文中,我们描述了一个使用108-b加法器的三v /sub /54 /spl倍/54-b乘法器,在关键路径中使用源控制的传输门多路器,以及一个Wallace树块,其中使用EDA工具自动分配低v和中v /sub /逻辑门。
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