Low current and voltage resistive switching memory device using novel Cu/Ta2O5/W structure

Abstract

Low current/voltage (∼10 nA/1.0V) resistive switching memory device in a Cu/Ta2O5/W structure has been proposed. The low resistance state (RLow) of the memory device decreases with increasing the programming current from 10 nA to 1mA, which can be useful for multi-level of data storage. This resistive memory devices have stable threshold voltage, good resistance ratio (RHigh/RLow) of 5.3×10⁷, good endurance of ≫10³ cycles, and excellent retention (≫11 hours) with resistance ratio of ≫ 9×10³ can be useful in future non-volatile memory applications.