V. Hurm, W. Benz, M. Berroth, W. Bronner, T. Fink, M. Haupt, K. Kohler, M. Ludwig, B. Raynor, J. Rosenzweig
{"title":"10 Gbit/s long wavelength monolithic integrated optoelectronic receiver grown on GaAs","authors":"V. Hurm, W. Benz, M. Berroth, W. Bronner, T. Fink, M. Haupt, K. Kohler, M. Ludwig, B. Raynor, J. Rosenzweig","doi":"10.1109/ICIPRM.1996.492275","DOIUrl":null,"url":null,"abstract":"The first 10 Gbit/s 1.3-1.55 /spl mu/m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 /spl mu/m gate length AlGaAs-GaAs HEMT process. At a wavelength of 1.3 /spl mu/m the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10/sup -9/).","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
The first 10 Gbit/s 1.3-1.55 /spl mu/m wavelength monolithic integrated photoreceiver grown on GaAs substrate has been fabricated using a 0.3 /spl mu/m gate length AlGaAs-GaAs HEMT process. At a wavelength of 1.3 /spl mu/m the integrated InGaAs MSM photodiode has a DC responsivity of 0.34 A/W. The photoreceiver bandwidth is 7.1 GHz and its sensitivity is better than -14.7 dBm (BER=10/sup -9/).
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