Wei Wang, Qian Zhou, Jisheng Pan, Zheng Zhang, E. Tok, Y. Yeo
{"title":"Thermal stability of highly compressive strained germanium-tin (GeSn) grown by molecular beam epitaxy","authors":"Wei Wang, Qian Zhou, Jisheng Pan, Zheng Zhang, E. Tok, Y. Yeo","doi":"10.1109/ISTDM.2014.6874668","DOIUrl":null,"url":null,"abstract":"Highly strained Ge<sub>1-x</sub>Sn<sub>x</sub> films were epitaxially grown on Ge(001), with x up to 0.17. Good crystalline quality and a relatively flat surface were obtained. Critical temperatures exist for Sn segregation for various x. XPS shows that the Sn surface segregation could occur at temperatures as low as 400 °C for Ge<sub>0.932</sub>Sn<sub>0.068</sub>.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874668","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Highly strained Ge1-xSnx films were epitaxially grown on Ge(001), with x up to 0.17. Good crystalline quality and a relatively flat surface were obtained. Critical temperatures exist for Sn segregation for various x. XPS shows that the Sn surface segregation could occur at temperatures as low as 400 °C for Ge0.932Sn0.068.
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