Three-dimensional Structure Recognition of Circuit Patterns on Semiconductor Devices Using Multiple SEM Images Detected in Different Electron Scattering Angles

K. Yasui, M. Osaki, A. Miyamoto, Hitoshi Namai
{"title":"Three-dimensional Structure Recognition of Circuit Patterns on Semiconductor Devices Using Multiple SEM Images Detected in Different Electron Scattering Angles","authors":"K. Yasui, M. Osaki, A. Miyamoto, Hitoshi Namai","doi":"10.1109/IPFA47161.2019.8984877","DOIUrl":null,"url":null,"abstract":"We propose a method for recognizing the three-dimensional structure of circuit patterns to achieve automatic pattern width measurement of semiconductor devices using scanning electron microscope (SEM). Pattern measurement requires pattern recognition technique to identify the measurement position from an SEM image. However, pattern width and brightness values on an image fluctuate according to patterning conditions, type of material, etc., so distinguishing between line and space through image matching based on brightness information is difficult. In view of this problem, we investigated a line and space discrimination method that focuses on fundamentally different three-dimensional structures (concavity and convexity) and considering that this difference between concavity and convexity appears as a difference in the scattering angles of secondary electrons, we captured two images corresponding to these two scattering angles. In this way, we were able to design image feature that portray the difference between line and space from these two images and perform high-speed and easy capture of concavity and convexity information. In experiments, the proposed method achieved a 100% accuracy rate in automatic critical-dimension measurements.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984877","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

We propose a method for recognizing the three-dimensional structure of circuit patterns to achieve automatic pattern width measurement of semiconductor devices using scanning electron microscope (SEM). Pattern measurement requires pattern recognition technique to identify the measurement position from an SEM image. However, pattern width and brightness values on an image fluctuate according to patterning conditions, type of material, etc., so distinguishing between line and space through image matching based on brightness information is difficult. In view of this problem, we investigated a line and space discrimination method that focuses on fundamentally different three-dimensional structures (concavity and convexity) and considering that this difference between concavity and convexity appears as a difference in the scattering angles of secondary electrons, we captured two images corresponding to these two scattering angles. In this way, we were able to design image feature that portray the difference between line and space from these two images and perform high-speed and easy capture of concavity and convexity information. In experiments, the proposed method achieved a 100% accuracy rate in automatic critical-dimension measurements.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于不同电子散射角度的多幅扫描电镜图像的半导体器件电路图形三维结构识别
提出了一种利用扫描电子显微镜(SEM)识别电路图形的三维结构,实现半导体器件图形宽度自动测量的方法。模式测量需要模式识别技术来从扫描电镜图像中识别测量位置。然而,图像上的图案宽度和亮度值会随着图案条件、材料类型等的变化而波动,因此基于亮度信息的图像匹配很难区分线和空间。针对这一问题,我们研究了一种线与空间判别方法,该方法关注的是本质上不同的三维结构(凹凸),考虑到这种凹凸的差异表现为二次电子散射角的差异,我们捕获了这两个散射角对应的两幅图像。通过这种方式,我们能够设计图像特征来描绘这两幅图像的线和空间之间的差异,并执行高速和轻松的凹凸信息捕获。实验表明,该方法在关键尺寸自动测量中达到100%的准确率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
How To Determine Fluorine Contamination Level On A Normal Al Bondpad? Increased Fault Isolation Efficiency by Using Scan Cell Visualizer for Scan Chain Failures The Solutions of Bit Line Failure Analysis: Low kV E-Beam, EBAC and LVI Correlation Analysis and Characterization of Micromorphology and Optoelectronic Properties of SiO2/SiC in Pressure Sensor A Robust Dual Directional SCR without Current Saturation Effect for ESD Applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1