Full 3D process/device simulations re-using 2D TCAD knowledge for optimizing N and P-type FinFET transistors

Abstract

3D TCAD process and device simulations are used to gain physical understanding and to optimize the performance of bulk-FinFETs. The channel profile was determined so as to realize higher drive current as well as lower punch-through current. For the first time, the full FinFET process flow simulation was performed using diffusion. activation and segregation models identical to those used in planar technology nodes. Thus, all the calibration methodologies and results gained previously in 2D TCAD could be re-used for the 3D FinFET process calibration. The simulated 3D doping and stress profiles are integrated as input to the device simulations. In this work, the 3D simulation results show good agreement with experimental data in terms of Vth and Ion/Ioff, considering lateral dopant diffusion and activation.