G. Molas, J. Colonna, R. Kies, D. Belhachemi, M. Bocquet, M. Gely, V. Vidal, P. Brianceau, L. Vandroux, G. Ghibaudo, B. De Salvo
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引用次数: 7
Abstract
This paper presents an in-depth investigation of the electrical properties of charge trap memories with AlN based storage layers. The memory performance and reliability are studied in details and compared with the ones of a reference device using standard Si3N4 as storage layer. An engineered charge trapping layer is also proposed, made by an AlN/Si3N4 double layer, which shows reduced program/erase voltages, combined with 106 excellent endurance and good retention (ΔVT>5V after 10 years at 125°C).
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