A. Dadgar, M. Kuttler, M. Strassburg, R. Heitz, D. Bimberg, J. Hyeon, T. Grundemann, H. Schumann
{"title":"10/sup 16/ cm/sup -3/ electrically active and thermally stable deep Rh acceptors in InP","authors":"A. Dadgar, M. Kuttler, M. Strassburg, R. Heitz, D. Bimberg, J. Hyeon, T. Grundemann, H. Schumann","doi":"10.1109/ICIPRM.1996.492039","DOIUrl":null,"url":null,"abstract":"We present a detailed investigation of the electrically active Rh concentration in low-pressure metalorganic chemical vapor-phase epitaxy grown InP:Rh in dependence of the growth parameters. Rh introduces two deep mid gap acceptor levels RhA and RhB in InP at E/sub v/+0.71 eV and E/sub v/+0.62 eV, respectively. Taking into account the low diffusivity of Rh in InP (D/sub rh/(800/spl deg/C)/spl les/1/spl times/10/sup 14/ cm/sup 2//s) Rh is an interesting candidate as compensating dopant for thermally stable semi-insulating InP. We show that the electrically active Rh concentration can be increased by a factor 5 using the inert carrier gas N/sub 2/ instead of H/sub 2/.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492039","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We present a detailed investigation of the electrically active Rh concentration in low-pressure metalorganic chemical vapor-phase epitaxy grown InP:Rh in dependence of the growth parameters. Rh introduces two deep mid gap acceptor levels RhA and RhB in InP at E/sub v/+0.71 eV and E/sub v/+0.62 eV, respectively. Taking into account the low diffusivity of Rh in InP (D/sub rh/(800/spl deg/C)/spl les/1/spl times/10/sup 14/ cm/sup 2//s) Rh is an interesting candidate as compensating dopant for thermally stable semi-insulating InP. We show that the electrically active Rh concentration can be increased by a factor 5 using the inert carrier gas N/sub 2/ instead of H/sub 2/.
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