Jonggook Kim, B. O'Connell, W. K. Teng, M. Poulter
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Abstract
The equation of resistance drift governing oxidation is derived in this paper for Copper-Top (Cu-Top) interconnects to assess reliability of Cu-Top. Our equation is not only demonstrated by thermal storage tests at various temperatures but also characterized by dependence of time, temperature, metal width, and additional dielectric & conductive layers over Cu-Top. As a result, this approach enables the prediction of the accumulated resistance drift under any conditions for a lifetime operation.
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