G. Eneman, D. Brunco, L. Witters, J. Mitard, A. Hikavyy, A. De Keersgieter, P. Roussel, R. Loo, A. Veloso, N. Horiguchi, N. Collaert, A. Thean
{"title":"Impact of stressors in future SiGe-based FinFETs: Mobility boost and scalability","authors":"G. Eneman, D. Brunco, L. Witters, J. Mitard, A. Hikavyy, A. De Keersgieter, P. Roussel, R. Loo, A. Veloso, N. Horiguchi, N. Collaert, A. Thean","doi":"10.1109/ISTDM.2014.6874646","DOIUrl":null,"url":null,"abstract":"S/D epitaxial layers and SRBs are the most effective stressors in scaled FinFETs. While S/D stressors are well established, for SRBs the remaining technical difficulties are significant. However, its expected performance boost and enhanced scalability makes developing SRBs worthwhile, especially when combined with alternative channel materials.","PeriodicalId":371483,"journal":{"name":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISTDM.2014.6874646","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
S/D epitaxial layers and SRBs are the most effective stressors in scaled FinFETs. While S/D stressors are well established, for SRBs the remaining technical difficulties are significant. However, its expected performance boost and enhanced scalability makes developing SRBs worthwhile, especially when combined with alternative channel materials.
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