A. Chasin, J. Franco, E. Bury, R. Ritzenthaler, E. Litta, A. Spessot, N. Horiguchi, D. Linten, B. Kaczer
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引用次数: 5
Abstract
In this work, we address two open issues of HotCarrier Degradation (HCD) on n-type FinFET devices. Firstly, the controversial impact of fin width is studied in terms of exact {VOV ,VD} stress conditions and taking in account the impact of external parasitic series resistance and Self-Heating Effects (SHE). Secondly, the impact of Hydrogen/Deuterium High-Pressure Anneal (HPA) on both time-0 and reliability is evaluated.
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