{"title":"Thermal Analysis and Design of a Ka-Band Power Amplifier in 130 nm SiGe BiCMOS","authors":"Alexander Haag, M. Kaynak, A. Ulusoy","doi":"10.1109/SiRF56960.2023.10046279","DOIUrl":null,"url":null,"abstract":"This paper presents the design and thermal challenges of large-scale silicon-based power amplifiers (PAs). As an example, a Ka-Band PA in 130 nm silicon germanium (SiGe) BiCMOS with an aluminum back end of line (BEOL) is presented. It is a pseudo differential transformer-based design featuring efficient 2:1 transformers for a high impedance transformation ratio. The PA achieves Psat of 23.2 dBm at 26 % power added efficiency (PAE). Differing results due to on-chip thermal effects are presented and discussed in this paper.","PeriodicalId":354948,"journal":{"name":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"84 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SiRF56960.2023.10046279","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
This paper presents the design and thermal challenges of large-scale silicon-based power amplifiers (PAs). As an example, a Ka-Band PA in 130 nm silicon germanium (SiGe) BiCMOS with an aluminum back end of line (BEOL) is presented. It is a pseudo differential transformer-based design featuring efficient 2:1 transformers for a high impedance transformation ratio. The PA achieves Psat of 23.2 dBm at 26 % power added efficiency (PAE). Differing results due to on-chip thermal effects are presented and discussed in this paper.
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