Monolithic mode locked DBR laser with multiple-bandgap MQW structure realized by selective area growth

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.491962

M. Schilling, J. Bouayad-Amine, T. Feeser, H. Haisch, E. Kuhn, E. Lach, K. Satzke, J. Weber, E. Zielinski

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引用次数: 3

Abstract

The realization of novel monolithically integrated multiple-segment pulse laser sources in InGaAsP MQW technology is reported. The MQW layers for all functional sections of these devices, the modulator, the active (gain) and the passive waveguide, as well as the Bragg section were grown in a single selective area growth (SAG) step by LP-MOVPE on SiO/sub 2/ patterned 2 inch InP substrates. Due to a properly selected pattern geometry 3 different bandgap regions with smooth interfaces are thereby formed along the laser cavity. The more than 4 mm long DBR lasers which exhibit a threshold current as low as 30 mA were mode locked by an intra-cavity electroabsorption modulator applying a sinusoidal voltage at around 10 GHz. In this way an optical pulse train with pulse widths <13 ps (measured with a streak camera) and high extinction ratio was generated. A time-bandwidth product of 0.5 close to the Fourier limit is obtained. This device is very attractive for signal generation in 40 Gb/s OTDM transmission systems at 1.55 /spl mu/m wavelength.

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多带隙MQW结构的单片锁模DBR激光器通过选择性面积生长实现

报道了采用InGaAsP MQW技术实现的新型单片集成多段脉冲激光源。这些器件的所有功能部分的MQW层，调制器，有源(增益)和无源波导，以及Bragg部分，都是通过LP-MOVPE在SiO/sub 2/图案2英寸InP衬底上以单个选择区域生长(SAG)步骤生长的。由于正确选择了图形几何形状，因此沿着激光腔形成了3个具有光滑界面的不同带隙区域。超过4mm长的DBR激光器的阈值电流低至30ma，通过腔内电吸收调制器施加约10ghz的正弦电压来锁模。通过这种方法产生了脉冲宽度<13 ps(用条纹相机测量)且消光比高的光脉冲串。得到了接近傅里叶极限的0.5的时带宽积。该器件对于1.55 /spl mu/m波长的40gb /s OTDM传输系统的信号生成具有很大的吸引力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 8th International Conference on Indium Phosphide and Related Materials

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