Robust dynamic node low voltage swing domino logic with multiple threshold voltages

Zhiyu Liu, V. Kursun
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引用次数: 12

Abstract

A new low voltage swing circuit technique based on a dual threshold voltage CMOS technology is presented in this paper for simultaneously reducing active and standby mode power consumption and enhancing evaluation speed and noise immunity in domino logic circuits. The proposed circuit technique modifies both the upper and lower boundaries of the voltage swing at the dynamic node. Meanwhile, full voltage swing signals are maintained at inputs and outputs for robust and high speed operation. Power supply, ground, and threshold voltages are simultaneously optimized to minimize the power-delay product (PDP). The proposed technique reduces the PDP by up to 51.9% as compared to the standard full-swing circuits in a 45nm CMOS technology. The active mode power consumption is reduced by up to 40.4% due to the lower switching power required to charge/discharge the dynamic node. Furthermore, the evaluation speed and noise immunity are enhanced by up to 19.4% and 39.1%, respectively, as compared to the standard full-swing circuits. The proposed low swing technique also reduces the idle mode leakage power consumption of high fan-in domino gates by up to 84.2%
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具有多个阈值电压的鲁棒动态节点低压摇摆多米诺逻辑
本文提出了一种基于双阈值CMOS技术的低电压摆电路技术,可同时降低多米诺骨牌逻辑电路的有源和待机模式功耗,提高评估速度和抗噪声能力。所提出的电路技术修改了动态节点电压摆幅的上下限。同时,在输入和输出保持全电压摆幅信号,以实现鲁棒和高速运行。同时优化电源、接地和阈值电压,以最大限度地降低PDP (Power delay product)。与45纳米CMOS技术中的标准全摆幅电路相比,该技术将PDP降低了51.9%。由于动态节点充电/放电所需的开关功率较低,主动模式功耗降低了40.4%。此外,与标准全摆幅电路相比,评估速度和抗噪能力分别提高了19.4%和39.1%。所提出的低摆幅技术还可将高扇入多米诺门的空闲模式泄漏功耗降低高达84.2%
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