Electrical Performances and Physics Based Analysis of 650V E-mode GaN Devices at High Temperatures

Chi Zhang, Sheng Li, Siyang Liu, Jiaxing Wei, Wangran Wu, Weifeng Sun
{"title":"Electrical Performances and Physics Based Analysis of 650V E-mode GaN Devices at High Temperatures","authors":"Chi Zhang, Sheng Li, Siyang Liu, Jiaxing Wei, Wangran Wu, Weifeng Sun","doi":"10.1109/IPFA47161.2019.8984870","DOIUrl":null,"url":null,"abstract":"High temperature performances of commercial cascode GaN FET and p-GaN HEMT are investigated and compared in this paper. The differences of device structures lead to quite different high temperatures performances. The p-GaN device shows smaller shifts in threshold voltage but larger increase in gate leakage current at high temperatures than cascode device. Moreover, high temperatures also lead to different variations in dynamic electrical parameters. By using analytical models, it is found that the decrease of electron mobility dominates the variations in switching parameters for p-GaN device, however, the decrease of Vth dominates the variations for cascode device.","PeriodicalId":169775,"journal":{"name":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA47161.2019.8984870","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

High temperature performances of commercial cascode GaN FET and p-GaN HEMT are investigated and compared in this paper. The differences of device structures lead to quite different high temperatures performances. The p-GaN device shows smaller shifts in threshold voltage but larger increase in gate leakage current at high temperatures than cascode device. Moreover, high temperatures also lead to different variations in dynamic electrical parameters. By using analytical models, it is found that the decrease of electron mobility dominates the variations in switching parameters for p-GaN device, however, the decrease of Vth dominates the variations for cascode device.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
高温下650V e模GaN器件的电学性能和物理分析
本文研究并比较了商用级联GaN FET和p-GaN HEMT的高温性能。器件结构的差异导致其高温性能差异很大。与级联码器件相比,p-GaN器件在高温下的阈值电压变化较小,但栅极泄漏电流增加较大。此外,高温还会导致动态电参数的不同变化。通过分析模型发现,在p-GaN器件中,电子迁移率的降低主导了开关参数的变化,而在级联码器件中,Vth的降低主导了开关参数的变化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
How To Determine Fluorine Contamination Level On A Normal Al Bondpad? Increased Fault Isolation Efficiency by Using Scan Cell Visualizer for Scan Chain Failures The Solutions of Bit Line Failure Analysis: Low kV E-Beam, EBAC and LVI Correlation Analysis and Characterization of Micromorphology and Optoelectronic Properties of SiO2/SiC in Pressure Sensor A Robust Dual Directional SCR without Current Saturation Effect for ESD Applications
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1