Q. H. Le, D. K. Huynh, S. Lehmann, Zhixing Zhao, C. Schwan, T. Kämpfe, M. Rudolph
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引用次数: 3
Abstract
This paper presents the modeling and analysis of the high-frequency noise in 22-nm FDSOI CMOS technology. Experimental noise parameters up to 170 GHz of a multi-finger n-channel transistor are extracted by utilizing the tuner-based method. The Pucel (PRC) noise model is applied and validated for prediction of 22-nm FDSOI noise characteristics from low frequencies to D-band frequencies. In addition, extraction and analysis of the model parameters versus drain current at the W-band frequency 94 GHz are demonstrated.
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