Large-signal modeling of GaN devices with emphasis on trapping effect and thermal challenges (Invited)

F. Lin, Weiqiang Qian, Lei Li, Mehdi Khan
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Abstract

This paper will present the recent development of large-signal modeling cum PA design based on Dynax GaN HEMT devices. A modified Angelov model is used to model the pulse I-V data. Improved modeling results to address the trapping effect will be given together with new model parameter extraction methodology. The model is implemented in a commercial EDA tools for PA design simulation.
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GaN器件的大信号建模,重点是捕获效应和热挑战(特邀)
本文将介绍基于Dynax GaN HEMT器件的大信号建模和PA设计的最新进展。采用改进的Angelov模型对脉冲I-V数据进行建模。将给出改进的模型结果,以解决捕获效应,并给出新的模型参数提取方法。该模型在商用EDA工具中实现,用于PA设计仿真。
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