Zhi-Ting Ke, Cheng-Shih Lee, Keng-Huei Shen, E. Chang
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引用次数: 1
Abstract
This work is to study the dry-film photoresist to form patterns for flip-chip bumps on 300 mm wafers. The so-called "double-deck metal seed layer" process was also applied in this study by using sputtered 1000 /spl Aring/ Ti (Titanium) and 5000 /spl Aring/ Cu (Copper) metal layers. By welding the metal and solder electroplating technology on the chip of the integrated circuits, Cu/Ni/solder alloy fill up hole under bumps metallization after solder re-flowing at 220/spl deg/C. This research optimizes the parameters of the dry-film photoresist, lithography technology, metal sputtering technology and metal electroplating technology.
本工作是研究干膜光刻胶在300mm晶圆上形成倒装凸点图案。本研究还采用了所谓的“双层金属种子层”工艺,使用溅射1000 /spl的Aring/ Ti (Titanium)和5000 /spl的Aring/ Cu (Copper)金属层。通过在集成电路芯片上焊接金属和电镀焊锡技术,在220/spl℃下焊锡回流后,Cu/Ni/焊锡合金填补了凹凸金属化下的空洞。本研究对干膜光刻胶、光刻工艺、金属溅射工艺和金属电镀工艺的参数进行了优化。