{"title":"Energy-efficient redox-based non-volatile memory devices and logic circuits","authors":"R. Waser, V. Rana, S. Menzel, E. Linn","doi":"10.1109/E3S.2013.6705863","DOIUrl":null,"url":null,"abstract":"Redox-Based Resistive Switching Memories (ReRAM), also called nanoionic memories or memristive elements, are widely considered providing a potential leap beyond the limits of Flash (with respect to write speed, write energies) and DRAM (scalability, retention times) as well as energy-efficient approaches to neuromorphic concepts.","PeriodicalId":231837,"journal":{"name":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/E3S.2013.6705863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Redox-Based Resistive Switching Memories (ReRAM), also called nanoionic memories or memristive elements, are widely considered providing a potential leap beyond the limits of Flash (with respect to write speed, write energies) and DRAM (scalability, retention times) as well as energy-efficient approaches to neuromorphic concepts.
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