A study of EEPROM endurance correlation with wafer level reliability data

D. Wilkie, M. Hensen
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引用次数: 1

Abstract

The results of a study of EEPROM endurance correlation with various wafer level reliability tests are presented. Samples from multiple wafer lots of various EEPROM array sizes were cycled, and the data were compared to wafer level data taken from the same wafer lots. The results show that TDDB studies alone do not correlate well with endurance. Other data, such as yield studies and alignment measurements, also do not completely correlate with endurance. Despite this we believe that the wafer level tests such as TDDB being performed now are good indicators of overall oxide quality.
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EEPROM寿命与晶片级可靠性数据的相关性研究
给出了EEPROM寿命与各种晶圆级可靠性测试的相关性研究结果。对不同EEPROM阵列尺寸的多个晶圆批次的样本进行循环,并将数据与来自相同晶圆批次的晶圆级数据进行比较。结果表明,单独的TDDB研究与耐力没有很好的相关性。其他数据,如屈服研究和对准测量,也不完全与耐力相关。尽管如此,我们相信晶圆级测试(如TDDB)现在正在进行是整体氧化物质量的良好指标。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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