M. le Pallec, R. Bauknecht, M. Bitter, H. Melchior
{"title":"A new concept for InP-HBT fabrication process","authors":"M. le Pallec, R. Bauknecht, M. Bitter, H. Melchior","doi":"10.1109/ICIPRM.1999.773735","DOIUrl":null,"url":null,"abstract":"A new technology for submicron InP HBT-based integrated circuit fabrication has been investigated. The new concept takes advantage of the crystal plane dependency of InP and InGaAs wet chemical etching profiles combined with an optimized planarization technique. High-speed transistors with a simplified processing in a reduced fabrication time are obtained for the InP-HBT technology.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"60 12","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773735","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new technology for submicron InP HBT-based integrated circuit fabrication has been investigated. The new concept takes advantage of the crystal plane dependency of InP and InGaAs wet chemical etching profiles combined with an optimized planarization technique. High-speed transistors with a simplified processing in a reduced fabrication time are obtained for the InP-HBT technology.
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