Effect of channel width, length, and latent damage on NBTI

Abstract

pMOSFETs negatively biased under operating conditions and subjected to high temperature experience a progressive threshold voltage shift (Negative Bias Temperature Instability, NBTI). NBTI depends on several technological factors. We are showing in this paper a comprehensive study which discuss the NBTI dependence on channel length and channel width: overall, devices with shorter and wider channel are the most sensitive to NBTI. We are also discussing the strong sensitivity of NBTI to latent plasma induced damage: this makes NBTI a reliable index of latent damage.