M. Jeong, Joo-Wan Lee, I. Cho, Byung-Gook Park, Hyungcheol Shin, Jang-Sik Lee
{"title":"Novel 3-D stacked NAND flash string without body cross-talk effect","authors":"M. Jeong, Joo-Wan Lee, I. Cho, Byung-Gook Park, Hyungcheol Shin, Jang-Sik Lee","doi":"10.1109/IMW.2010.5488410","DOIUrl":null,"url":null,"abstract":"We have investigated ID-VGS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer. The body cross-talk problem was eliminated completely. We think proposed structure and its modification will be very promising candidate for future high density NAND flash memory.","PeriodicalId":149628,"journal":{"name":"2010 IEEE International Memory Workshop","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2010.5488410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
We have investigated ID-VGS characteristic of proposed 3-D stacked NAND flash string with common gate structure and a shield layer. The body cross-talk problem was eliminated completely. We think proposed structure and its modification will be very promising candidate for future high density NAND flash memory.
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