K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian, J. Harris
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引用次数: 7
Abstract
A single electron transistor (SET) operating at room temperature was fabricated for the first time using a scanning tunneling microscope (STM) nano-oxidation process. A clear Coulomb staircase with an /spl sim/140 mV period and Coulomb oscillation period of /spl sim/460 mV were observed at 300K.
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