{"title":"Extraction of thermal resistance for fully-depleted SOI MOSFETs","authors":"T. Lee, R. Fox","doi":"10.1109/SOI.1995.526469","DOIUrl":null,"url":null,"abstract":"This paper presents a convenient and direct method for extracting thermal impedance for fully-depleted SOI MOSFETs. The results are consistent with thermal resistance calculations using a physical model. Demonstration of the use of a Thermal Impedance Pre-Processor applied to an electrothermal circuit model in the simulator Saber to predict thermal transient response is also provided along with measurement data.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526469","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents a convenient and direct method for extracting thermal impedance for fully-depleted SOI MOSFETs. The results are consistent with thermal resistance calculations using a physical model. Demonstration of the use of a Thermal Impedance Pre-Processor applied to an electrothermal circuit model in the simulator Saber to predict thermal transient response is also provided along with measurement data.
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