A comparison study of Silicon Nanowire Transistor with Schottky-Barrier source/drain and doped source/drain

Abstract

In this work, SB-NWTs are comprehensively studied in comparison with SNWTs. The EPs of SB-NWTs are shown to be unpromising and Rlin-SB-NWTs is found to be unexpectedly large, which can both be attributed to SB impact. Then, BL and MR are studied and the improvement of SB-NWTs is investigated. It is found that the SS of SB-NWTs cannot be superior to that of SNWTs and unexpected DIBL/FoM degradation may be induced. In addition, Rlin-SB-NWTs is found to be always worse than Rlin-SNWTs if LSDE of SNWTs is designed to be adequately short (e.g. LSDE≪10nm). The results show that the replacement of SNWTs by SB-NWTs, even the MSB-NWTs and DSSB-NWTs cannot be promising.