{"title":"Quantum-wire effects in thin and narrow SOI MOSFETs","authors":"X. Baie, J. Colinge, V. Bayot, E. Grivei","doi":"10.1109/SOI.1995.526463","DOIUrl":null,"url":null,"abstract":"If the dimensions of a semiconductor sample are reduced sufficiently, low-dimensionality effects involving quantization effects start to appear. These effects manifest themselves in the form of conductance oscillations. They appear at nanometer-scale dimensions at room temperature. However, it is possible to observe quantization effects in 100-nm-scale devices when the temperature is reduced sufficiently. In this paper measurements and simulations have been applied to SOI quantum wire MOSFETs.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526463","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28
Abstract
If the dimensions of a semiconductor sample are reduced sufficiently, low-dimensionality effects involving quantization effects start to appear. These effects manifest themselves in the form of conductance oscillations. They appear at nanometer-scale dimensions at room temperature. However, it is possible to observe quantization effects in 100-nm-scale devices when the temperature is reduced sufficiently. In this paper measurements and simulations have been applied to SOI quantum wire MOSFETs.
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